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반도체 소자의 물리적 모델 해석 시뮬레이션

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Semiconductor physical model simulation

  • 모델명 APSYS
  • 제조사 Crosslight
  • 장비용도 시험
  • 장비구분 데이터처리장비 > 장비소프트웨어 > 계측/분석소프트웨어

상세정보

구축일자 2008-11-13
납품업체 Crosslight
위치 광주광역시 북구 첨단과기로 123 (오룡동) 1번지 광주과학기술원 정보통신공학부A F5 504
구성및성능 - Diodes transistors and various other types of silicon devices
- LEDs and OLEDs
- Solar cells
- Photodetectors (PD)
- High electron mobility transistors (HEMT)
- Heterojunction bipolar transistors (HBT)
- Resonant tunneling diodes (RTD)
- Quantum well infrared photodetectors (QWIP)
- Small MOS devices with strong quantum mechanical effects (Quantum-MOS)
- Power devices
장비안내 APSYS Advanced Physical Models of Semiconductor Devices is based on 2D/3D finite element analysis of electrical optical and thermal properties of compound semiconductor devices with silicon as a special case. Emphasis has been placed on band structure engineering and quantum mechanical effects. Inclusion of various optical modules also makes this simulation package attractive for applications involving photosensitive or light emitting devices
Applications
- Diodes transistors and various other types of silicon devices
- LEDs and OLEDs
- Solar cells
- Photodetectors (PD)
- High electron mobility transistors (HEMT)
- Heterojunction bipolar transistors (HBT)
- Resonant tunneling diodes (RTD)
- Quantum well infrared photodetectors (QWIP)
- Small MOS devices with strong quantum mechanical effects (Quantum-MOS)
- Power devices