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분자선박막증착장치part3

상담·문의하기

Molecualr Beam Epitaxy Part 3

  • 모델명 VG-80H
  • 제조사 Vg Scienta
  • 장비용도
  • 장비구분 기계가공/시험장비 > 반도체장비 > 달리분류되지않는반도체장비

상세정보

구축일자 1999-12-30
납품업체 Vg Scienta
위치 광주광역시 북구 첨단과기로 123 (오룡동) _ _ 정보통신공학부 A동 F1 108
구성및성능
장비안내 특징
Molecular beam epitaxy (MBE) is an Ultra High Vacuum (UHV) evaporation process the product of the evaporation being a single crystal semiconductor film of high qualityand well-defined thickness. The constituent elements of the deposited film are produced by molecular beam sources of the Knudsen-cell` (K-cell) design. K-cells are suitable for materials that will provide a sufficient beam flux up to 1300?C (beam flux is a function of cell temperature). For example in growing GaAs with an arsenic over-pressure a deposition rate of l?m per hour is achieved with a Gallium K-cell temperature of approximately 1000C. Forthorough component outgassing the K-cell can be run at 1400?C. Self-supportingtantalum heater foils minimise the use of PBN insulators and the low thermal mass ofthe K-cell means that it has a fast thermal response.

구성및성능
The V80 MBE system comprises the deposition chamber preparation chamber with fast entry lock parking stage outgas stage and transfer mechanism bench and control rack and computer. The deposition chamber and preparation chamber are operated under ultra-high vacuum (UHV) and are in a bake-out zone.

활용분야
HEMT HBP PIN PD MSM PD QW and QD epi layer Growth

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