This paper describes a MEMS pressure sensor based on micro-switch array. It consists of a silicon substrate that has a thin metal-deposited diaphragm and an array of micro-switch patterned on a Pyrex glass. The micro-switch array to measure the change of a pressure is formed on a micromachined resistor made by indium tin oxide (ITO). The distance of each electrode on the ITO resistor is about 10 μm. When a pressure is applied to the diaphragm of the sensor, the Si diaphragm with a conductive layer starts to contact onto the micro-switch of the ITO resistor at a certain pressure level. The number of the micro-switch to be contacted to the diaphragm is changed due to increase of a contact area. The change of the electrical resistance between both ends of the ITO resistor is measured using a very simple electrical circuit. Basic characteristics of the fabricated prototype pressure sensor are successfully evaluated and the validity of the proposed pressure sensor is verified.