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논문 리스트

2010
Electrical Instabilities of Mesoporous Silica Thin Films Electrical Instabilities of Mesoporous Silica Thin Films
조선대학교 기초과학연구원
정현담
논문정보
Publisher
조선자연과학논문집
Issue Date
2010-12-31
Keywords
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Citation
-
Source
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Journal Title
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Volume
3
Number
4
Start Page
219
End Page
225
DOI
ISSN
Abstract
On the surface of mesoporous silica thin films (MSTF) which were fabricated by sol-gel approach there are existences of water and three different silanol types including chained, germinal and isolated silanol. Their amounts changes as a function of aging time of used sol solution, as confirmed by FT-IR. The adsorbed water generates ionic carriers such as H+ and OH- and passivates the Si dangling bonds at the interface of silicon wafer-MSTF. The ionic carriers can not only transport across the thickness of thin film to enhance the leakage current but also diffuse toward the silicon wafer-MSTF interface to depassivate Si dangling bonds. On the other hand, chained silanols or germinal silanols promote the moisture adsorption of MSTF and tend to form strongly hydrogen bonded systems with adsorbed water molecules resulting in very high dielectric constant. Isolated silanol, on the contrary, affects less on electrical properties of thin film.

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이름 소속
정현담 화학과