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2017
Fabrication of Infrared Filters for Three-Dimensional CMOS Image Sensor Applications
한국전기전자재료학회
이명복
논문정보
- Publisher
- Transactions on Electrical and Electronic Materials
- Issue Date
- 2017-12-01
- Keywords
- -
- Citation
- -
- Source
- -
- Journal Title
- -
- Volume
- 18
- Number
- 6
- Start Page
- 341
- End Page
- 344
- ISSN
- 1229-7607
Abstract
Infrared (IR) filters were developed to implement integrated three-dimensional (3D) image sensors that are capable ofobtaining both color image and depth information at the same time. The combination of light filters applicable to the 3Dimage sensor is composed of a modified IR cut filter mounted on the objective lens module and on-chip filters such asIR pass filters and color filters. The IR cut filters were fabricated by inorganic SiO2/TiO2 multilayered thin-film depositionusing RF magnetron sputtering. On-chip IR pass filters were synthetized by dissolving various pigments and dyes in organicsolvents and by subsequent patterning with photolithography. The fabrication process of the filters is fairly compatible withthe complementary metal oxide semiconductor (CMOS) process. Thus, the IR cut filter and IR pass filter combined withconventional color filters are considered successfully applicable to 3D image sensors.
- 광주대학교
- KCI
- Transactions on Electrical and Electronic Materials
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